Intrinsic carrier transport properties of single-walled carbon nanotubes areprobed by two parallel methods on the same individual tubes: the contactlessdielectric force microscopy (DFM) technique and the conventional field-effecttransistor (FET) method. The dielectric responses of SWNTs are stronglycorrelated with electronic transport of the corresponding FETs. The DC biasvoltage in DFM plays a role analogous to the gate voltage in FET. A microscopicmodel based on the general continuity equation and numerical simulation isbuilt to reveal the link between intrinsic properties such as carrierconcentration and mobility and the macroscopic observable, i.e. dielectricresponses, in DFM experiments. Local transport barriers in nanotubes, whichinfluence the device transport behaviors, are also detected with nanometerscale resolution.
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